Size and dopant-concentration dependence of photoluminescence properties of ion-implanted phosphorus- and boron-codoped Si nanocrystals

Nakamura, Toshihiro*; Adachi, Sadao*; Fujii, Minoru*; Sugimoto, Hiroshi*; Miura, Kenta*; Yamamoto, Shunya

Physical Review B, 91(16), p.165424_1 - 165424_8, 2015/04

https://doi.org/10.1103/PhysRevB.91.165424

Semiconductor nanocrystals have unique electrical and optical properties, because of the quantum confinement effect, and the doping of impurities into nanocrystals. In this study, we investigated the photoluminescence (PL) properties of phosphorus- (P) and boron- (B) co-doped Si nanocrystals (Si NCs), which was synthesized using an ion implantation technique. The Si-NC size (average diameter: 3.5, 4.4, 5.2 nm) and the P and B ion doses (0.1-4.510 cm)values were systematically varied. We find that the PL peak energy shifts to lower values with increasing the average diameters of Si NCs and PB ion dose. The results of PL measurements indicate that the PL spectra are due to the band-to-band transition at the reduced Si-NC band gap caused by the formation of impurity and the radiative transitions between defect- and/or impurity-related localized states. It was found that the PL properties can be controlled by varying the Si-NC size as well as the dopant concentration.

Effects of implantation conditions on the luminescence properties of Eu-doped GaN

Nakanishi, Yasuo*; Wakahara, Akihiro*; Okada, Hiroshi*; Yoshida, Akira*; Oshima, Takeshi; Ito, Hisayoshi; Nakao, Setsuo*; Saito, Kazuo*; Kim, Y. T.*

Nuclear Instruments and Methods in Physics Research B, 206, p.1033 - 1036, 2003/05

https://doi.org/10.1016/S0168-583X(03)00928-5

Photo luminescence properties of GaN implanted with Eu ions were studied. The GaN was epitaxialy grown on sapphire substrate. Multiple-implantation at RT was done to form box profile of Eu at a mean Eu concentration from 2.810 to 2.810/cm. Samples were annealed in NH, N at 900-1050C for 5-30 min after implantation. As the result, sharp emission peaks around 621nm which is assigned as 4f-4f transition were observed. The intensity of peaks increases with increasing Eu concentration and saturate at Eu concentrations around 2.810/cm.

Effect of 3 MeV electron irradiation on the photoluminescence properties of Eu-doped GaN

Nakanishi, Yasuo*; Wakahara, Akihiro*; Okada, Hiroshi*; Yoshida, Akira*; Oshima, Takeshi; Ito, Hisayoshi

Applied Physics Letters, 81(11), p.1943 - 1945, 2002/09

https://doi.org/10.1063/1.1504873

Eu-doped GaN samples were irradiated with 3MeV-electrons at RT at 10 - 3x10/cm. Photoluminescence (PL) propeties related to D-F in Eu were studied using He-Cd laser as excitation source. As the results, it is found that PL intensity is not affected by electron irradiation.Considering that PL peak related to near-band-edge strongly decreases due to electron irradiation, we can conclude that PL related to D-F in Eu has very strong radiation resistance.

Photoluminescence properties of Eu-doped GaN by ion implantation

Nakanishi, Yasuo*; Wakahara, Akihiro*; Yoshida, Akira*; Oshima, Takeshi; Ito, Hisayoshi; Sakai, Shiro*

IPAP Conference Series 1 (Proceedings of International Workshop on Nitride Semiconductors), p.486 - 489, 2000/11

no abstracts in English

Scandium and gallium implantation doping of silicon carbide

T.Henkel*; *; *; I.Koutzarov*; Okumura, Hajime*; Yoshida, Sadafumi*; Oshima, Takeshi

Mat. Res. Soc. Symp. Proc., 512, p.163 - 168, 1998/00

no abstracts in English

Basic characteristics of radiophotoluminescence glass dosimeter

*; Murakami, Hiroyuki

JAERI-Tech 94-034, 43 Pages, 1994/12

JAERI-Tech-94-034.pdf:1.65MB

no abstracts in English

Basic characteristics of RPL glass dosimeters for personal dosimetry

*; Murakami, Hiroyuki; Minami, Kentaro

Firumu Bajji Nyusu, 0(200), p.3 - 8, 1993/08

no abstracts in English